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| HTX2-600 Symbol 2.T2 HTX2-600 VDRM = 600 V 3.Gate 1.T1 IT(RMS) = 2.0A 1.T1 2. T2 3. Gate FEATURES Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=2A) High Commutation dv/dt HTC2-600 HTM2-600 General Description The Triac HTX2-600 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. Absolute Maxim um Ratings Symbol VDRM IT(RMS) ITSM V GM IGM PGM TSTG Tj (Ta=25 ) Parameter Repetitive Peak Off-State V oltage R.M.S On-State Current (Ta = 66 ) Surge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) Peak Gate V oltage Peak Gate Current Peak Gate Power Dissipation Storage Temperature Range Operating Temperature Range V alue 600 1.5 13/15 6 0.5 1 -40 to +125 -40 to +125 U nits V A A V A W SEMIHOW REV.1.0 Jan 2006 HTX2-600 Electrical Characteristics Symbol IGT V GT VGD (dv/dt)c Parameter Gate Trigger Current Gate Trigger Voltage Non Trigger Gate Voltage (Ta=25) Test Conditions VD=6V RL=10 , VD=6V RL=10 , Tj=125 VD=1/2VDRM , 1+, 1-, 31+, 1-, 3- M in Typ M ax 20 1.5 Units mA V V 0.2 Critical Rate of Rise of Tj=125 VD=2/3VDRM , Off-State Voltage at (di/dt)c=-0.75A/ms Communication Holding Current Repetitive Peak OffState Current VD=VDRM, Single Phase, Half W ave, Tj =125 5 V/uS IH IDRM V TM 5 0.5 1.6 mA mA V Peak On-State V oltage IT=6A, Inst, Measurement Thermal Characteristics Symbol RTH(J-C) Parameter Thermal Resistance Test Conditions Junction to Case M in Typ M ax 6.25 Units /W SEMIHOW REV.1.0 Jan 2006 HTX2-600 Performance Curves Fig 1. Gate Characteristics 10 1 Fig 2.On-State Voltage 101 Gate Voltage (V) On-state Current (A) 100 100 10-1 101 102 103 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Gate Current (mA) On-state Voltage (V) Fig 3. Gate Trigger Voltage vs. Junction Temperature 103 1.5 Fig 4. On State Current vs. Maximum Power Dissipation Power Dissipation (W) VGT(t) X 100 (%) VGT(25) 102 V+GT1 V-GT1 V+GT3 V-GT3 1.2 0.9 0.6 0.3 101 -50 0 50 100 150 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Junction Temperature () RMS On-State Current (A) Fig 5. On State Current vs. Allowable Case Temperature 130 12 Fig 6. Surge On-State Current Rating (Non-Repetitive) Surge On-State Current (A) Allowable Case Temp () 120 110 100 90 80 70 60 50 40 0 0.2 0.4 0.6 0.8 1.0 1.2 10 8 6 4 2 0 100 101 102 RMS On-State Current (A) Time (Cycles) SEMIHOW REV.1.0 Jan 2006 HTX2-600 Fig 7. Gate Trigger Current vs. Junction Temperature 103 10 Fig8. Transient Thermal Impedance VGT(t) X 100 (%) VGT(25) 102 Transient Thermal Impedance (/W) 1 101 -50 0 50 100 150 10-2 10-1 100 101 102 Junction Temperature () Time (Sec) Fig 7. Gate Trigger Characteristics Test Circuit 10 10 A 6V V RG A 6V V RG Test Procedure I Test Procedure II 10 A 6V V RG Test Procedure III SEMIHOW REV.1.0 Jan 2006 HTX2-600 Package Dimension HTC2-600 (TO-126) DIM A B C D G G1 H H3 K L Millimeters 8.5max 12.0max 13.0min 3.80.2 0.780.08 1.2 2.8max 1.27 2.50.2 2.3max 3.200.2 Dimensions in Millimeters SEMIHOW REV.1.0 Jan 2006 HTX2-600 Package Dimension HTM2-600 (TO-126ML) corresponding symbol A(mm) B(mm) C(mm) E(mm) F(mm) G(mm) G1(mm) H(mm) H3(mm) I(mm) K(mm) L(mm) 1(mm) measurement 7.990.25 11.120.25 14.50.5 3.6250.125 1.40.12 0.760.08 1.30.12 3.570.13 2.010.13 2.990.38 1.00.12 2.3MAX 3.00.12 SEMIHOW REV.1.0 Jan 2006 |
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